PART |
Description |
Maker |
MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|
TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
LD271LH LD271 LD271H LD271L |
INFRARD EMITTER GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS[Siemens Semiconductor Group]
|
TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter Infrared LED GaA??s Infrared Emitter Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
Q62703-Q67 LD261 LD261-5 Q62703-Q395 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
LD266 LD267 |
GaAs Infrared Emitter Arrays
|
OSRAM GmbH
|
Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH435 |
GaAs INFRARED EMITTER DOUBLE EMITTING DIODE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
TLN11707 TLN117F |
INFRARED LED GAAS INFRAED EMITTER 红外发光二极管公认审INFRAED发射
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED http://
|
LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|